3SK318
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
REJ03G0819-0200
(Previous ADE-208-600)
Rev.2.00
Aug.10.2005
Features
•
Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
Excellent cross modulation characteristics
Capable low voltage operation; +B= 5V
•
•
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
Note: Marking is “YB–“.
Rev.2.00 Aug 10, 2005 page 1 of 7
3SK318
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
20
16
12
8
200
150
100
50
V
= 1.7 V
G1S
VG2S = 3 V
1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
4
0.8 V
8
0
0
2
4
6
10
50
100
150
200
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
Drain Current vs.
Gate2 to Source Voltage
Drain Current vs.
Gate1 to Source Voltage
20
16
12
8
20
16
12
8
V
DS = 3.5 V
2.0 V
VDS = 3.5 V
2.5 V
1.8 V
1.6 V
2.0 V
1.4 V
1.5 V
1.2 V
VG1S = 1.0 V
4
4
VG2S = 1.0 V
0
0
1
2
3
4
5
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Gate1 to Source Voltage VG1S (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Drain Current
25
20
15
10
5
30
24
18
12
6
VDS = 3.5 V
VG2S = 3 V
2.5 V
2 V
1.5 V
VDS = 3.5 V
V
G2S = 3 V
1 V
1.2
f = 900 MHz
0
0
5
10
15 20
25
0.4
0.8
1.6
2.0
Drain Current ID (mA)
Gate1 to Source Voltage VG1S (V)
Rev.2.00 Aug 10, 2005 page 3 of 7
3SK318
Noise Figure vs. Drain Current
VDS = 3.5 V
Power Gain vs. Drain to Source Voltage
25
5
4
3
2
1
VG2S = 3 V
20
15
10
5
f = 900 MHz
VG2S = 3 V
D = 10 mA
f = 900 MHz
I
0
0
5
10
15
20
25
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain Current ID (mA)
Noise Figure vs. Drain to Source Voltage
Power Gain vs. Gate2 to Source Voltage
25
5
VG2S = 3 V
ID = 10 mA
f = 900 MHz
VDS = 3.5 V
f = 900MHz
20
15
10
5
4
3
2
1
0
0
1
2
3
4
5
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate2 to Source Voltage VG2S (V)
Noise Figure vs. Gate2 to Source Voltage
5
VDS = 3.5 V
f = 900MHz
4
3
2
1
0
1
4
2
3
5
Gate2 to Source Voltage VG2S (V)
Rev.2.00 Aug 10, 2005 page 4 of 7
3SK318
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
Scale: 1 / div.
1
90°
.8
1.5
.6
60°
120°
2
.4
3
4
5
30°
150°
.2
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–.6
–120°
–1.5
–.8
–1
–90°
Test Condition :
V
DS = 3.5 V , VG2S = 3 V
Test Condition :
V
DS = 3.5 V , VG2S = 3 V
ID = 10mA
ID = 10mA
50 to 1000 MHz (50 MHz step)
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.002 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
150°
4
5
.2
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–1
–90°
Test Condition :
Test Condition :
VDS = 3.5 V , VG2S = 3 V
ID = 10mA
VDS = 3.5 V , VG2S = 3 V
ID = 10mA
50 to 1000 MHz (50 MHz step)
50 to 1000 MHz (50 MHz step)
Rev.2.00 Aug 10, 2005 page 5 of 7
3SK318
S Parameter
(VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50Ω)
Freq.
S11
S21
S12
S22
(MHz)
50
MAG.
1.000
0.998
0.997
0.994
0.994
0.986
0.978
0.972
0.969
0.954
0.955
0.941
0.932
0.924
0.919
0.905
0.896
0.884
0.880
0.866
ANG.
–2.8
MAG.
2.41
2.41
2.39
2.38
2.37
2.35
2.30
2.28
2.26
2.23
2.19
2.17
2.14
2.09
2.07
2.03
2.00
1.96
1.93
1.89
ANG.
176.3
171.9
167.6
163.7
159.8
155.5
151.4
147.6
143.6
140.0
135.9
132.2
128.6
125.0
121.5
117.9
114.7
110.4
107.1
103.8
MAG.
ANG.
89.1
88.5
80.7
76.6
79.1
75.4
75.0
78.0
71.6
69.5
71.5
70.6
69.0
71.4
69.0
68.9
74.2
75.5
77.8
82.1
MAG.
0.999
0.996
0.996
0.994
0.991
0.988
0.983
0.980
0.976
0.971
0.966
0.960
0.955
0.948
0.942
0.937
0.930
0.923
0.917
0.910
ANG.
–2.2
0.00068
0.00176
0.00223
0.00303
0.00365
0.00414
0.00484
0.00533
0.00588
0.00617
0.00666
0.00672
0.00694
0.00709
0.00689
0.00699
0.00644
0.00633
0.00585
0.00605
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
–5.8
–4.5
–9.1
–6.7
–12.2
–15.1
–18.5
–21.3
–24.1
–27.0
–29.7
–32.8
–35.7
–38.3
–41.3
–44.1
–46.9
–49.2
–52.4
–54.7
–57.7
–8.7
–11.0
–13.2
–15.3
–17.4
–19.6
–21.7
–23.7
–25.6
–27.8
–29.9
–31.8
–33.8
–35.8
–37.6
–39.8
–41.9
Rev.2.00 Aug 10, 2005 page 6 of 7
3SK318
Package Dimensions
JEITA Package Code
SC-82A
RENESAS Code
Package Name
MASS[Typ.]
0.006g
PTSP0004ZA-A
CMPAK-4(T) / CMPAK-4(T)V
D
A
e2
B
e
Q
b1
c
B
E
HE
LP
Reference
Symbol
Dimension in Millimeters
Min
0.8
0
Nom
Max
1.1
0.1
1.0
L
A
A
A
A
1
2
3
A
A
L1
0.8
0.9
0.25
0.32
0.42
0.3
A3
b
b
0.25
0.35
0.4
0.5
x
S
A
M
e2
e
b
b
b
1
2
3
0.4
c
0.1
0.13
0.11
2.0
0.15
c
1
A2
A1
A
l1
D
E
e
1.8
2.2
1.15
1.25
0.65
1.35
e
0.6
2.1
2
b5
y
S
H
1.8
0.3
0.1
0.2
2.4
0.7
e1
E
S
L
L
0.5
1
b
b1
b3
L
0.6
P
l1
b
2
x
0.05
0.05
0.45
0.55
c1
c
1
y
b
4
5
1
c
c
b
e
b4
Pattern of terminal position areas
1.5
0.2
l
0.9
1
A-A Section
B-B Section
Q
Ordering Information
Part Name
Quantity
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
3SK318YB-TL-E
3000
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
|